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Applied Physics Reviews / Volume 1985

J. Appl. Phys. 58, R1 (1985); http://dx.doi.org/10.1063/1.336070 (29 pages)

GaAs, AlAs, and AlxGa1−xAs@B: Material parameters for use in research and device applications

Sadao Adachi

Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation, Musashino‐shi, Tokyo 180, Japan

(Received 7 September 1984; accepted 1 April 1985)

The AlxGa1−xAs/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications. Even though the basic AlxGa1−xAs/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters. Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J. S. Blakemore, J. Appl. Phys. 53, R123 (1982)]. The purpose of this review is (i) to obtain and clarify all the various material parameters of AlxGa1−xAs alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications. A complete set of material parameters are considered in this review for GaAs, AlAs, and AlxGa1−xAs alloys. The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs). The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Fröhlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties.
Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x. Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well. Other parameters, e.g., electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction. However, some kinds of the material parameters, e.g., lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder. It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data. A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics. Key properties of the material parameters for use in research work and a variety of AlxGa1−xAs/GaAs device applications are also discussed in detail.

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KEYWORDS and PACS

Keywords

HETEROJUNCTIONS, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, PHYSICAL PROPERTIES, ELECTRONIC STRUCTURE, ELECTRICAL PROPERTIES, MECHANICAL PROPERTIES, MAGNETIC PROPERTIES, REVIEWS, LATTICE PARAMETERS, THERMODYNAMIC PROPERTIES, BAND STRUCTURE, OPTICAL PROPERTIES, CHARGED−PARTICLE TRANSPORT, MAGNETIC SUSCEPTIBILITY, LATTICE DYNAMICS, PIEZOELECTRICITY, EFFECTIVE MASS

PACS

  • 71.20.-b

    Electron density of states and band structure of crystalline solids

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 75.30.Cr

    Saturation moments and magnetic susceptibilities

  • 65.90.+i

    Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.336070

PUBLICATION DATA

ISSN

1931-9401 (online)

For access to fully linked references, you need to log in.
    S. Adachi, J. Appl. Phys. 53, 5863 (1982JAPIAU000048000007003018000001).

    S. Adachi, J. Appl. Phys. 53, 8775 (1982JAPIAU000053000012008775000001).

    S. Adachi, J. Appl. Phys. 54, 1844 (1983JAPIAU000054000004001844000001).

    S. Adachi and K. Oe, J. Appl. Phys. 54, 6620 (1983JAPIAU000054000011006620000001).

    S. Adachi and K. Oe, J. Appl. Phys. 56, 74 (1984JAPIAU000056000001000074000001).

    S. Adachi and K. Oe, J. Appl. Phys. 56, 1499 (1984JAPIAU000056000005001499000001).

    J. C. Phillips and J. A. Van Vechten, Phys. Rev. Lett. 22, 705 (1969).

    M. Ettenberg and R. J. Paff, J. Appl. Phys. 41, 3926 (1970JAPIAU000041000010003926000001).

    L. R. Weisberg and J. Blanc, J. Appl. Phys. 34, 1002 (1963JAPIAU000034000004001002000001).

    I. Kudman and R. J. Paff, J. Appl. Phys. 43, 3760 (1972JAPIAU000043000009003760000001).

    R. W. Keyes, J. Appl. Phys. 33, 3371 (1962JAPIAU000033000011003371000001).

    M. S. Kushwaha, Phys. Rev. B 24, 2115 (1981).

    J. Sapriel, J. C. Michel, J. C. Tolédano, R. Vacher, J. Kervarec, and A. Regreny, Phys. Rev. B 28, 2007 (1983). Note that there is a typographical error in Eq. (5) of this reference.

    O. K. Kim and W. G. Spitzer, J. Appl. Phys. 50, 4362 (1979JAPIAU000050000006004362000001).

    B. Jusserand and J. Sapriel, Phys. Rev. B 24, 7194 (1981).

    R. Bonneville, Phys. Rev. B 24, 1987 (1981).

    C. W. Myles, Phys. Rev. B 28, 4519 (1983), and references therein.

    R. Bonneville, Phys. Rev. B 29, 907 (1984).

    E. F. Steigmeier, Appl. Phys. Lett. 3, 6 (1963APPLAB000003000001000006000001).

    B. Abeles, Phys. Rev. 131, 1906 (1963).

    M. A. Afromowitz, J. Appl. Phys. 44, 1292 (1973JAPIAU000044000003001292000001).

    W. B. Joyce and R. W. Dixon, J. Appl. Phys. 46, 855 (1975JAPIAU000046000002000855000001).

    D. J. Stukel and R. N. Euwema, Phys. Rev. 188, 1193 (1969).

    H. J. Lee, L. Y. Juravel, and J. C. Woolley, Phys. Rev. B 21, 659 (1980).

    A.-B. Chen and A. Sher, Phys. Rev. B 22, 3886 (1980).

    A.-B. Chen and A. Sher, Phys. Rev. B 23, 5360 (1981).

    W. D. Laidig, D. K. Blanks, and J. F. Schetzina, J. Appl. Phys. 56, 1791 (1984JAPIAU000056000006001791000001).

    M. Cardona, K. L. Shaklee, and F. H. Pollak, Phys. Rev. 154, 696 (1967).

    P. Parayanthal, C. S. Ro, F. H. Pollak, C. R. Stanley, G. W. Wicks, and L. F. Eastman, Appl. Phys. Lett. 43, 109 (1983APPLAB000043000001000109000001).

    R. S. Bauer, P. Zurcher, and H. W. Sang, Jr., Appl. Phys. Lett. 43, 663 (1983APPLAB000043000007000663000001).

    R. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974).

    By an application of C-V profiling, Kroemer et al. [H. Kroemer, Wu-Yi Chien, J. S. Harris, Jr., and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980APPLAB000036000004000295000001)] have found the conduction-band discontinuity for an LPE grown GaAs/Al0.3Ga0.7As heterojunction to be DeltaEC = 0.248 eV, corresponding to about 0.66(Eg2−Eg1) rather than Dingle's value 0.85(Eg2−Eg1) [see Ref. 70], They have speculated that the difference is attributed to composition grading during LPE growth.

    W. Paul, J. Appl. Phys. 32, 2082 (1961JAPIAU000032000010002082000001).

    N. Lifshitz, A. Jayaraman, R. A. Logan, and R. G. Maines, Phys. Rev. B 20, 2398 (1979).

    D. L. Camphausen, G. A. N. Connell, and W. Paul, Phys. Rev. Lett. 26, 184 (1971).

    P. J. Dean and D. G. Thomas, Phys. Rev. 150, 690 (1966).

    P. J. Dean, G. Kaminsky, and R. B. Zetterstrom, J. Appl. Phys. 38, 3551 (1967JAPIAU000038000009003551000001).

    D. K. Kyser and V. Rehn, Phys. Rev. Lett. 40, 1038 (1978).

    R. R. L. Zucca and Y. R. Shen, Phys. Rev. B 1, 2668 (1970).

    J. B. Restorff, B. Houston, J. R. Burke, and R. E. Hayes, Appl. Phys. Lett. 32, 189 (1978APPLAB000032000003000189000001).

    R. J. Nicholas, S. J. Sessions, and J. C. Porta, Appl. Phys. Lett. 37, 178 (1980APPLAB000037000002000178000001).

    D. Olego, T. Y. Chang, E. Silberg, E. A. Caridi, and A. Pinczuk, Appl. Phys. Lett. 41, 476 (1982APPLAB000041000005000476000001).

    M. Cardona and D. L. Greenaway, Phys. Rev. 125, 1291 (1962).

    C. Hermann and T. P. Pearsall, Appl. Phys. Lett. 38, 450 (1981APPLAB000038000006000450000001).

    J. J. Yang, L. A. Moudy, and W. I. Simpson, Appl. Phys. Lett. 40, 244 (1982APPLAB000040000003000244000001).

    N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, Y.-C. Chang, and H. Morkoç, Phys. Rev. B 30, 4481 (1984).

    C. Mailhiot, Y.-C. Chang, and T. C. McGill, Phys. Rev. B 26, 4449 (1982), and references therein.

    K. Tanaka, M. Nagaoka, and T. Yamabe, Phys. Rev. B 28, 7068 (1983).

    C. Priester, G. Allan, and M. Lannoo, Phys. Rev. B 28, 7194 (1983).

    W. T. Masselink, Y.-C. Chang, and H. Morkoç, Phys. Rev. B 28, 7373 (1983).

    G. G. Kleiman and M. Fracastoro-Decker, Phys. Rev. B 21, 3478 (1980).

    K. Masu, M. Konagai, and K. Takahashi, J. Appl. Phys. 51, 1060 (1980JAPIAU000051000002001060000001).

    J. C. M. Henning, J. J. P. Noijen, and A. G. M. de Nijs, Phys. Rev. B 27, 7451 (1983).

    P. Lawaetz, Phys. Rev. 166, 763 (1968)
    174, 867 (1968)
    183, 730 (1969).

    F. K. Reinhart and R. A. Logan, J. Appl. Phys. 44, 3171 (1973JAPIAU000044000007003171000001).

    K. Röll, J. Appl. Phys. 47, 3224 (1976JAPIAU000047000007003224000001).

    S. Kishino, N. Chinone, H. Nakashima, and R. Ito, Appl. Phys. Lett. 29, 488 (1976APPLAB000029000008000488000001).

    G. H. Olsen and M. Ettenberg, J. Appl. Phys. 48, 2543 (1977JAPIAU000048000006002543000001).

    J. P. van der Ziel and A. C. Gossard, J. Appl. Phys. 48, 3018 (1977JAPIAU000048000007003018000001).

    W. Pötz and P. Vogl, Phys. Rev. B 24, 2025 (1981).

    M. H. Grimsditch, D. Olego, and M. Cardona, Phys. Rev. B 20, 1758 (1979).

    W. A. Harrison, Phys. Rev. 104, 1281 (1956).

    G. A. Samara, Phys. Rev. B 27, 3494 (1983), and references therein.

    R. E. Fern and A. Onton, J. Appl. Phys. 42, 3499 (1971JAPIAU000042000009003499000001).

    S. Hudgens, M. Kastner, and H. Fritzsche, Phys. Rev. Lett. 33, 1552 (1974).

    T. Sahu and P. K. Misra, Phys. Rev. B 26, 6795 (1982).

    J. C. Phillips and J. A. Van Vechten, Phys. Rev. Lett. 23, 1115 (1969).

    J. B. McKitterick, Phys. Rev. B 28, 7384 (1983).

    D. Berlincourt, H. Jaffe, and L. R. Shiozawa, Phys. Rev. 129, 1009 (1963).

    P. O. Sliva and R. Bray, Phys. Rev. Lett. 14, 372 (1965).

    S. D. Sarma, Phys. Rev. B 27, 2590 (1983), and references therein.

    D. C. Langreth, Phys. Rev. 159, 717 (1967).

    A. K. Saxena, Phys. Rev. B 24, 3295 (1981).

    P. K. Bhattacharya, U. Das, and M. J. Ludowise, Phys. Rev. B 29, 6623 (1984).

    Y. Takeda, M. A. Littlejohn, and R. J. Trew, Appl. Phys. Lett. 40, 836 (1982APPLAB000040000009000836000001).

    T. Sugeta, A. Majerfeld, A. K. Saxena, and P. N. Robson, Appl. Phys. Lett. 31, 842 (1977APPLAB000031000012000842000001).

    C. L. Collins and P. Y. Yu, Phys. Rev. B 30, 4501 (1984).

    J. G. Ruch and G. S. Kino, Appl. Phys. Lett. 10, 40 (1967APPLAB000010000002000040000001).

    D. L. Rode and P. A. Fedders, J. Appl. Phys. 54, 6425 (1983JAPIAU000054000011006425000001), and references therein.

    P. A. Fedders and C. W. Myles, Phys. Rev. B 29, 802 (1984).

    M. A. Gilleo, P. T. Bailey, and D. E. Hill, Phys. Rev. 174, 898 (1968).

    E. F. Schubert, E. O. Göbel, Y. Horikoshi, K. Ploog, and H. J. Queisser, Phys. Rev. B 30, 813 (1984).

    H. C. Casey, Jr., D. D. Sell, and M. B. Panish, Appl. Phys. Lett. 24, 63 (1974APPLAB000024000002000063000001).

    H. Burkhard, J. Appl. Phys. 55, 503 (1984JAPIAU000055000002000503000001)
    B. Broberg and S. Lindgren, J. Appl. Phys. 55, 3376 (1984JAPIAU000055000009003376000001).

    P. A. Kirkby, P. R. Selway, and L. D. Westbrook, J. Appl. Phys. 50, 4567 (1979JAPIAU000050000007004567000001).

    C. W. Higginbotham, M. Cardona, and F. H. Pollak, Phys. Rev. 184, 821 (1969).

    J. A. Van Vechten, Phys. Rev. 182, 891 (1969).


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