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Applied Physics Reviews — 1990


Deep donor levels (DX centers) in III‐V semiconductors

P. M. Mooney

J. Appl. Phys. 67, R1 (1990); http://dx.doi.org/10.1063/1.345628 (26 pages)

Online Publication Date: 12 December 2006

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DX centers, deep levels associated with donors in III‐V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness of III‐V semiconductors for heterojunction device structures. Much progress has been made in our understanding of the electrical and optical characteristics of DX centers as well as their effects on the behavior of various device structures through systematic studies in alloys of various composition and with applied hydrostatic pressure. It is now generally believed that the DX level is a state of the isolated substitutional donor atom. The variation of the transport properties and capture and emission kinetics of the DX level with the conduction‐band structure is now well understood. It has been found that the properties of the deep level when it is resonant with the conduction band, and is thus a metastable state, are similar to its characteristics when it is the stable state of the donor. And it has been consistently found that there is a large energy difference between the optical and thermal ionization energies, implying that this deep state is strongly coupled to the crystal lattice. The shifts in the emission kinetics due to the variation in the local environment of the donor atom suggest that the lattice relaxation involves the motion of an atom (the donor or a neighboring atom) from the group‐III lattice site toward the interstitial site. Total energy calculations show that such a configuration is stable provided that the donor traps two electrons, i.e., has negative U. Verification of the charge state of the occupied DX level is needed as well as direct evidence for its microscopic structure.
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61.72.jn Color centers
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Solid‐state sensors for trace hydrogen gas detection

Constantinos Christofides and Andreas Mandelis

J. Appl. Phys. 68, R1 (1990); http://dx.doi.org/10.1063/1.346398 (30 pages)

Online Publication Date: 12 December 2006

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This paper reviews the development, history, theoretical basis, and experimental performance of solid‐state hydrogen detectors under flow‐through conditions available to date such as pyroelectric, piezoelectric, fiber optic, and electrochemical devices. Semiconductor hydrogen detectors will only be reviewed briefly, as excellent reviews on this subject already exist. In view of the fact that almost all the devices that will be discussed later in this paper use Pd as a hydrogen trap, we devote a subsection to examining the role of palladium as a catalyst as well as some of the characteristics of the Pd‐H2 system. Non‐solid‐state hydrogen sensors, such as the flame ionization detector are not the object of this review. A useful feature of this review is a comparison of operating characteristics of each device in a general table in Sec. VII. In that section a general discussion is presented, including a critical comparison of the capabilities and parameters of various solid‐state hydrogen sensors in the form of a table showing data collected from the literature. The Pd‐fiber optic sensor is the most sensitive optical device operating at room temperature. The Pd‐photopyroelectric sensor appears to be most economical and second best in sensitivity at room temperature; it has the best potential for high signal‐to‐noise operation at the widest temperature range, down to cryogenic temperatures. The Pd‐field effect transistor devices exhibit the second highest sensitivity at elevated temperatures.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
77.70.+a Pyroelectric and electrocaloric effects
77.65.-j Piezoelectricity and electromechanical effects
42.81.Pa Sensors, gyros

Gallium arsenide and other compound semiconductors on silicon

S. F. Fang, K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka

J. Appl. Phys. 68, R31 (1990); http://dx.doi.org/10.1063/1.346284 (28 pages)

Online Publication Date: 12 December 2006

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The physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed in this paper. The nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail. The properties of devices fabricated in GaAs and other compound semiconductors grown on Si substrates are discussed in comparison with those grown on GaAs substrates. The advantages of GaAs and other compound semiconductors on Si, namely, the low cost, superior mechanical strength, and thermal conductivity, increased wafer area, and the possibility of monolithic integration of electronic and optical devices are also discussed.
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68.55.-a Thin film structure and morphology
85.30.-z Semiconductor devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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