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Applied Physics Reviews — 1992


Porous silicon formation mechanisms

R. L. Smith and S. D. Collins

J. Appl. Phys. 71, R1 (1992); http://dx.doi.org/10.1063/1.350839 (22 pages)

Online Publication Date: 12 December 2006

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Recent reports describing photoluminescence in porous silicon have heightened the level of interest in it as a unique electronic material, and have created a need for a more complete understanding of the mechanism of porous silicon formation. The various models describing porous silicon formation are reviewed and the known electrochemical and morphological properties are discussed with the intention of unifying the different models into a comprehensive explanation for the formation of a porous structure in silicon. Because the specific surface dissolution chemistry is critical for a complete understanding of pore formation, some of the more prominent dissolution reactions are also reviewed and their relative importance to pore generation and morphology is discussed. Some aspects of the recently reported quantum effects are also reviewed. Because the mechanism of porous silicon formation involves a wide range of interdisciplinary fields, a considerable number of analogies and examples to related phenomena are also presented throughout the review to aid comprehension.
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61.66.Bi Elemental solids
72.80.Cw Elemental semiconductors
81.20.-n Methods of materials synthesis and materials processing

Quantitative emission microscopy

J. Kölzer, C. Boit, A. Dallmann, G. Deboy, J. Otto, and D. Weinmann

J. Appl. Phys. 71, R23 (1992); http://dx.doi.org/10.1063/1.350466 (19 pages)

Online Publication Date: 12 December 2006

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Emission microscopy has now become established as an effective technique in terms of reliability physics of industrial semiconductors. This convenient method allows chip verification and failure analysis to be carried out in many applications. Besides this, emission microscopy provides a technique for use in device engineering and the optimization of test structures. The key to using this technique to permit a more sophisticated quantitative analysis lies in a unique assignment of the light emission to the defect mechanism. Since the corresponding phenomena are numerous and their details are not fully clarified in all cases, further investigation is still required before this technique can be used routinely in a quantitative rather than qualitative approach. Some quantitative aspects of emission microscopy with respect to fundamental studies will therefore be outlined in this article, and the applicability of such practical guidelines will be illustrated. This provides the fundamentals for a comprehensive evaluation of the potential applications and degree of informativeness of this advanced method of failure analysis.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
81.70.-q Methods of materials testing and analysis
07.60.-j Optical instruments and equipment
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