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Applied Physics Reviews — 1997


The physics and technology of gallium antimonide: An emerging optoelectronic material

P. S. Dutta, H. L. Bhat, and Vikram Kumar

J. Appl. Phys. 81, 5821 (1997); http://dx.doi.org/10.1063/1.365356 (50 pages)

Online Publication Date: 12 December 2006

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 μm. The III–V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III–V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. © 1997 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
81.65.Rv Passivation
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.Gz Photodetectors (including infrared and CCD detectors)
84.60.Jt Photoelectric conversion
01.30.Rr Surveys and tutorial papers; resource letters

Ion beams in silicon processing and characterization

E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch

J. Appl. Phys. 81, 6513 (1997); http://dx.doi.org/10.1063/1.365193 (49 pages)

Online Publication Date: 12 December 2006

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. © 1997 American Institute of Physics.
Show PACS
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
01.30.Rr Surveys and tutorial papers; resource letters
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
85.40.Hp Lithography, masks and pattern transfer
81.65.Tx Gettering
61.80.Jh Ion radiation effects

Erbium implanted thin film photonic materials

A. Polman

J. Appl. Phys. 82, 1 (1997); http://dx.doi.org/10.1063/1.366265 (39 pages)

Online Publication Date: 12 December 2006

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Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3,Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials. © 1997 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
85.40.Ry Impurity doping, diffusion and ion implantation technology
42.79.Wc Optical coatings
85.60.-q Optoelectronic devices
85.60.Jb Light-emitting devices
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
61.72.Cc Kinetics of defect formation and annealing
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
84.40.Ua Telecommunications: signal transmission and processing; communication satellites

The structural and luminescence properties of porous silicon

A. G. Cullis, L. T. Canham, and P. D. J. Calcott

J. Appl. Phys. 82, 909 (1997); http://dx.doi.org/10.1063/1.366536 (57 pages)

Online Publication Date: 12 December 2006

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A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described. © 1997 American Institute of Physics.  
Show PACS
78.55.Mb Porous materials
78.55.Ap Elemental semiconductors
61.43.Gt Powders, porous materials
78.60.Hk Cathodoluminescence, ionoluminescence
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.47.-p Spectroscopy of solid state dynamics
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