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The structural and luminescence properties of porous silicon

A. G. Cullis1, L. T. Canham2, and P. D. J. Calcott2

1Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
2DRA Malvern, Saint Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom

(Received 25 July 1996; accepted 16 April 1997)

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

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