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Applied Physics Reviews — 2000

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III–nitrides: Growth, characterization, and properties

S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten

J. Appl. Phys. 87, 965 (2000); http://dx.doi.org/10.1063/1.371971 (42 pages)

Online Publication Date: 12 December 2006

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During the last few years the developments in the field of III–nitrides have been spectacular. High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers have also been grown by MBE. Considerable work has been done on dislocations, strain, and critical thickness of GaN grown on different substrates. Splitting of valence band by crystal field and by spin-orbit interaction has been calculated and measured. The measured values agree with the calculated values. Effects of strain on the splitting of the valence band and on the optical properties have been studied in detail. Values of band offsets at the heterointerface between several pairs of different nitrides have been determined. Extensive work has been done on the optical and electrical properties. Near band-edge spectra have been measured over a wide range of temperatures. Free and bound exciton peaks have been resolved. Valence band structure has been determined using the PL spectra and compared with the theoretically calculated spectra. Strain and its effect on the optical properties of the III–nitride layers have been studied both theoretically and experimentally. Both n and p conductivity have been achieved. InGaN quantum wells with GaN and AlGaN barriers and cladding layers have been investigated. PL of the quantum wells is affected by confinement effects, band filling, quantum confined Stark effect, and strain. This work has led to the fabrication of advanced optoelectronic and electronic devices. The light-emitting decodes emitting in the blue and green regions of the spectrum have been commercialized. The work leading to these developments is reviewed in this article. The device processing methods and actual devices are not discussed. © 2000 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Jq Electro-optical effects
01.30.Rr Surveys and tutorial papers; resource letters

Local vibrational modes of impurities in semiconductors

M. D. McCluskey

J. Appl. Phys. 87, 3593 (2000); http://dx.doi.org/10.1063/1.372453 (25 pages)

Online Publication Date: 12 December 2006

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Omnipresent impurities such as carbon, oxygen, silicon, and hydrogen play important roles, both detrimental and beneficial, in the fabrication of solid-state devices. The electronic and vibrational properties of semiconductors are significantly altered by the presence of impurities. Atoms that are less massive than the host atoms, typically, show local vibrational modes (LVMs). Unlike lattice phonons, LVMs are localized in both the real and frequency domains, giving rise to sharp peaks in infrared-absorption and Raman-scattering spectra. The isotopic composition of the impurity and the surrounding atoms results in well-defined shifts in the vibrational frequencies. In Ge, GaAs, and CdTe, the host–isotope disorder leads to complex vibrational spectra that can be simulated by empirical, quasimolecular models. External parameters such as temperature and pressure (uniaxial and hydrostatic) have been tuned over a wide range to yield information about symmetry and impurity–host interactions. In this article, issues relating to LVMs in semiconductors are reviewed, with an emphasis on infrared and Raman spectroscopy. Experimental and theoretical studies of LVMs in semiconductors are described for several representative examples. © 2000 American Institute of Physics.
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63.20.Pw Localized modes
01.30.Rr Surveys and tutorial papers; resource letters
78.30.-j Infrared and Raman spectra

Silica glass: A material for photonics

A. J. Ikushima, T. Fujiwara, and K. Saito

J. Appl. Phys. 88, 1201 (2000); http://dx.doi.org/10.1063/1.373805 (13 pages)

Online Publication Date: 12 December 2006

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Recent studies on two aspects of silica glass as a photonic material will be described. Part A of this review will be focused on structural disorder and structural relaxations in silica glass. With regard to the structural disorder, investigations have been made to improve transparency and to shift the optical absorption edge in the ultraviolet towards shorter wavelengths. Remarkable advances have been achieved in the understanding of both light scattering, which is a dominant factor in the optical losses in silica fibers, and the absorption edge. Freezing of the structural disorder was observed, and structural relaxations are found to be important for improving the transparency, whereas for the absorption edge thermal vibration effects seem to be more predominant than the structural disorder. From the results, the present authors have tried to control the structural relaxation for developing silica glass with an ultimate optical transparency, finding that a very tiny amount of the proper impurity species gives rise to structural subrelaxations, which are effective in reducing the Rayleigh scattering. The scattering was reduced by 13% by addition of only 10 wt ppm Na2O, for example. In part B of this review the second-order optical nonlinearity induced in Ge-doped silica glass will be described based on recent experiments carried out by the group of present authors. A large second-order optical nonlinearity has been successfully induced in the glass by simultaneous applications of a high dc electric field and ultraviolet (UV) irradiation, so-called UV poling. The nonlinearity induced by UV poling in bulk and film samples has achieved a magnitude of χ(2), comparable to or even larger than those of LiNbO3 and other crystals. Surprisingly enough, the nonlinearity induced by this method then decays after the UV poling as an exact single-exponential function of time, very much unlike the usual decay processes observed in glasses. Evidence is presented associating the nonlinearity with GeE defect centers created from oxygen deficient vacancies through photochemical reactions. The decay or degradation can be made much slower with the addition of proper impurities which work as electron scavengers. In addition, we have found that crystallites are generated in the glass by the UV poling, which leads to an increase in the third-order nonlinearity, χ(3), approximately 15 times larger than before the treatment. As a whole, the evidence strongly suggests that a major origin of the second-order nonlinearity induced in the glass is a combined effect of a large third-order nonlinearity associated with the crystallites and an internal space-charge field, where the charges to build up the field are produced during the formation of GeE centers. © 2000 American Institute of Physics.
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61.43.Fs Glasses
01.30.Rr Surveys and tutorial papers; resource letters
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
42.70.Qs Photonic bandgap materials
77.22.Ej Polarization and depolarization

Relaxation in glassforming liquids and amorphous solids

C. A. Angell, K. L. Ngai, G. B. McKenna, P. F. McMillan, and S. W. Martin

J. Appl. Phys. 88, 3113 (2000); http://dx.doi.org/10.1063/1.1286035 (45 pages)

Online Publication Date: 12 December 2006

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The field of viscous liquid and glassy solid dynamics is reviewed by a process of posing the key questions that need to be answered, and then providing the best answers available to the authors and their advisors at this time. The subject is divided into four parts, three of them dealing with behavior in different domains of temperature with respect to the glass transition temperature, Tg, and a fourth dealing with “short time processes.” The first part tackles the high temperature regime T>Tg, in which the system is ergodic and the evolution of the viscous liquid toward the condition at Tg is in focus. The second part deals with the regime TTg, where the system is nonergodic except for very long annealing times, hence has time-dependent properties (aging and annealing). The third part discusses behavior when the system is completely frozen with respect to the primary relaxation process but in which secondary processes, particularly those responsible for “superionic” conductivity, and dopart mobility in amorphous silicon, remain active. In the fourth part we focus on the behavior of the system at the crossover between the low frequency vibrational components of the molecular motion and its high frequency relaxational components, paying particular attention to very recent developments in the short time dielectric response and the high Q mechanical response. © 2000 American Institute of Physics.
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61.43.Fs Glasses
01.30.Rr Surveys and tutorial papers; resource letters
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.20.Lc Time-dependent properties; relaxation
61.43.Dq Amorphous semiconductors, metals, and alloys
66.30.H- Self-diffusion and ionic conduction in nonmetals
63.50.-x Vibrational states in disordered systems

Mechanisms of transition-metal gettering in silicon

S. M. Myers, M. Seibt, and W. Schröter

J. Appl. Phys. 88, 3795 (2000); http://dx.doi.org/10.1063/1.1289273 (25 pages)

Online Publication Date: 12 December 2006

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The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. © 2000 American Institute of Physics.
Show PACS
81.65.Tx Gettering
81.05.Cy Elemental semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
01.30.Rr Surveys and tutorial papers; resource letters
65.20.-w Thermal properties of liquids
65.40.gd Entropy

Electron emission from ferroelectrics

G. Rosenman, D. Shur, Ya. E. Krasik, and A. Dunaevsky

J. Appl. Phys. 88, 6109 (2000); http://dx.doi.org/10.1063/1.1319378 (53 pages)

Online Publication Date: 12 December 2006

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Electron emission from ferroelectrics (FEE) is an unconventional electron emission effect. Methods of FEE excitation are quite different compared to classic electron emission from solids. Two kinds of FEE have been observed, “weak” and “strong.” “Weak” electron emission (current density 10−12–10−7 A/cm2) occurs from polar surfaces of ferroelectric materials in the ferroelectric phase only. A source of the electric field for “weak” FEE excitation is an uncompensated charge, generated by a deviation of macroscopic spontaneous polarization from its equilibrium state under a pyroelectric effect, piezoelectric effect, or polarization switching. The FEE is a tunneling emission current which screens uncompensated polarization charges. It is shown that the FEE is an effective tool for direct domain imaging and studies of electronic properties of ferroelectrics. “Strong” FEE, which is 10–12 orders of magnitude higher than “weak” FEE, achieves 100 A/cm2 and is plasma-assisted electron emission. Two modes of the surface flashover plasma formation followed by strong electron emission have been studied. The plasma of ferroelectric origin has been observed only in the ferroelectric phase and it is induced by polarization switching or a field-enforced phase transition, such as antiferroelectric–ferroelectric or relaxor–ferroelectric. The second mode of plasma is conventional surface flashover which may be initiated by a high voltage application in any phase from any dielectric, including ferroelectrics. In this review paper we consider numerous experimental results, as well as mechanisms of both types of electron emission from ferroelectrics. The main stress is placed on the material aspect in order to clarify the influence of ferroelectricity (ferroelectric phase transitions, polarization switching, etc.) on electron emission. Another aspect which is broadly discussed is the potential applications of these unconventional FEE emitters in various devices for development of high density FEE cathodes for microwave devices, as well as FEE converters of IR irradiation into visible light, x-ray imaging, FEE flat panel displays, etc. © 2000 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.70.+a Pyroelectric and electrocaloric effects
01.30.Rr Surveys and tutorial papers; resource letters
79.70.+q Field emission, ionization, evaporation, and desorption
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ej Polarization and depolarization
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