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Applied Physics Reviews — 2002

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Photoassisted scanning tunneling microscopy

Stefan Grafström

J. Appl. Phys. 91, 1717 (2002); http://dx.doi.org/10.1063/1.1432113 (37 pages)

Online Publication Date: 12 December 2006

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The combination of scanning tunneling microscopy (STM) with optical excitation adds new information to STM. A review is presented covering the work done on light-induced effects in STM during the past 15 years. Effects discussed include thermal effects, nonlinear effects, field enhancement at the STM tip, various effects on semiconductor surfaces, excitation of surface plasmons, detection of photoelectrons, spin-polarized tunneling, as well as light-induced nanomodifications, local optical spectroscopy, the use of ultrashort laser pulses for time-resolved STM, and the combination of STM and scanning near-field optical microscopy. © 2002 American Institute of Physics.
Show PACS
07.79.Cz Scanning tunneling microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
07.79.Fc Near-field scanning optical microscopes
01.30.Rr Surveys and tutorial papers; resource letters
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.25.+i Surface conductivity and carrier phenomena
79.60.-i Photoemission and photoelectron spectra
81.16.Ta Atom manipulation

Rare-earth doped polymers for planar optical amplifiers

L. H. Slooff, A. van Blaaderen, A. Polman, G. A. Hebbink, S. I. Klink, F. C. J. M. Van Veggel, D. N. Reinhoudt, and J. W. Hofstraat

J. Appl. Phys. 91, 3955 (2002); http://dx.doi.org/10.1063/1.1454190 (26 pages)

Online Publication Date: 28 March 2002

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Optical waveguide amplifiers based on polymer materials offer a low-cost alternative for inorganic waveguide amplifiers. Due to the fact that their refractive index is similar to that of standard optical fibers, they can be easily coupled to existing fibers with low coupling losses. Doping the polymer with rare-earth ions that yield optical gain is not straightforward, as the rare-earth salts are poorly soluble in the polymer matrix. This review article focuses on two different approaches to dope a polymer waveguide with rare-earth ions. The first approach is based on organic cage-like complexes that encapsulate the rare-earth ion and are designed to provide coordination sites to bind the rare-earth ion and to shield it from the surrounding matrix. These complexes also offer the possibility of attaching a highly absorbing antenna group, which increases the pump efficiency significantly. The second approach to fabricate rare-earth doped polymer waveguides is obtained by combining the excellent properties of SiO2 as a host for rare-earth ions with the easy processing of polymers. This is done by doping polymers with Er-doped silica colloidal spheres. © 2002 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
78.55.Kz Solid organic materials

Adhesive bonding in microelectronics and photonics

B. G. Yacobi, S. Martin, K. Davis, A. Hudson, and M. Hubert

J. Appl. Phys. 91, 6227 (2002); http://dx.doi.org/10.1063/1.1467950 (36 pages)

Online Publication Date: 13 May 2002

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The use of adhesive bonding in joining of materials with different characteristics is of major importance in a variety of microelectronic and photonic applications. The curing of such adhesives is also of great consequence, with the use of optical radiation for adhesive curing becoming the method of choice in various applications, especially bonding of components in microelectronics and fiber–optic assembly. This article reviews recent advances in the development of adhesives, their applications, and their curing methods using optical radiation; it also includes a brief overview of the adhesion mechanisms. © 2002 American Institute of Physics.
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68.35.Np Adhesion
81.90.+c Other topics in materials science (restricted to new topics in section 81)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
01.30.Rr Surveys and tutorial papers; resource letters
42.81.Bm Fabrication, cladding, and splicing
81.20.Vj Joining; welding

Transient enhanced diffusion of boron in Si

S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, and H. E. Maes

J. Appl. Phys. 91, 8919 (2002); http://dx.doi.org/10.1063/1.1471941 (23 pages)

Online Publication Date: 20 May 2002

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On annealing a boron implanted Si sample at ∼800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is temporary, on annealing the sample a second time after saturation, enhanced diffusion does not occur. It is therefore designated as transient enhanced diffusion (TED). The high concentration peak of the implanted boron profile, which is electrically inactive, does not diffuse. TED makes it difficult to fabricate modern Si based devices, in particular TED produces the parasitic barriers which degrade the performance of the SiGe heterostructure bipolar transistors and TED can limit the fabrication of shallow junctions required for sub-100 nm complementary metal–oxide–semiconductor technology. The mechanisms of TED have been elucidated recently. A Si interstitial “kicks out” the substitutional boron atom to an interstitial position where it can diffuse easily. Alternatively the interstitials and boron atoms form highly mobile pairs. In both cases Si interstitials are required for the diffusion of boron. Therefore the enhanced boron diffusivity is proportional to the concentration of the excess Si interstitials. The interstitials are injected during implantation with Si or dopant ions. The interstitials are also injected during oxidation of the Si surface. Therefore the diffusivity increases temporarily in both cases. Even at relatively low annealing temperatures (∼800 °C) the mobility of the interstitials is high. The TED at this temperature lasts for more than 1 h. This large TED time can be explained by the presence of interstitial clusters and interstitial–boron clusters. The interstitial clusters are the {311} extended defects and dislocation loops. The precise structure of interstitial–boron clusters is not yet known though several models have been proposed. The clusters are the reservoirs of the interstitials. When the supersaturation of interstitials becomes low, the clusters dissolve and emit interstitials. The interstitials emitted from the clusters sustain the TED. Many groups have suggested that the rate of emission of interstitials is determined by Ostwald ripening of the clusters. However, recently TED evolution has also been explained without invoking Ostwald ripening of the {311} defects. The evidence of Ostwald ripening of dislocation loops is more direct. In this case the Ostwald ripening has been confirmed by the measurements of the size distributions of the dislocation loops at different times and temperatures of annealing. At higher temperatures the extended clusters are not stable and coupling between the interstitials and boron atoms is reduced. Therefore at high temperatures TED lasts only for a short time. At high temperatures the displacement during TED is also small. This suggests that if rapid thermal annealing with high ramp rates is used, TED should be suppressed. Currently high ramp rates, 300–400 °C/s are being tried to suppress TED. © 2002 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
01.30.Rr Surveys and tutorial papers; resource letters
61.72.Nn Stacking faults and other planar or extended defects
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Magnetization-step studies of antiferromagnetic clusters and single ions: Exchange, anisotropy, and statistics

Y. Shapira and V. Bindilatti

J. Appl. Phys. 92, 4155 (2002); http://dx.doi.org/10.1063/1.1507808 (31 pages)

Online Publication Date: 1 October 2002

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A magnetic cluster is a group of magnetic ions (“spins”) that interact with each other but which, to a good approximation, do not interact with other magnetic ions. Such clusters are responsible for many of the interesting and useful properties of a large number of molecular crystals, and of dilute magnetic materials below the percolation concentration. In a molecular crystal the magnetic clusters are usually all of one type. In a dilute magnetic material, on the other hand, many cluster types are present. The magnetization-step (MST) method is a relatively new form of spectroscopy for measuring intracluster magnetic interactions, mainly exchange constants and anisotropy parameters. In dilute magnetic materials this method also yields the relative populations of different cluster types. This review focuses on the principles and applications of the MST method to relatively small clusters, no more than a dozen spins or so. It covers only MSTs from spin clusters in which the dominant exchange interaction is antiferromagnetic (AF), and MSTs from isolated magnetic ions. Such MSTs are the result of changes of the magnetic ground state, caused by energy-level crossings in a magnetic field H. At a sufficiently low temperature, each change of the ground state leads to a MST. Magnetic clusters may be classified by size. The smallest is a “single,” consisting of one isolated magnetic ion. Next are “pairs” (dimers), followed by “triplets” (trimers), “quartets” (tetramers), etc. Although the classification by size is useful, clusters of the same size may have different intracluster interactions, and also different geometrical shapes. More detailed classifications of magnetic clusters are therefore also needed. A cluster “type” specifies both the size of the cluster and the set of all intracluster magnetic interactions which are nonzero. Different geometries of clusters of the same type correspond to different “configurations.” MSTs from isolated spins (singles) are discussed first. When subjected to certain types of single-ion anisotropy, e.g., uniaxial hard-axis anisotropy, singles give rise to MSTs. Examples of anisotropy parameters which were determined from such MSTs are presented. An interesting application of MSTs from singles is the determination of the populations of Jahn–Teller distortions which are energetically equivalent at H = 0 but are inequivalent at finite H. For clusters larger than singles, the strongest intracluster interaction is usually the isotropic exchange. Using a model with one isotropic exchange constant J, predictions for MSTs from pairs, open and closed triplets, and the six possible types of quartets, are presented. Observations of some of these MSTs, and the exchange constants derived from them, are discussed. Recent studies of MSTs from AF rings in molecular crystals are summarized. The remainder of the review is devoted to a detailed discussion of MSTs in dilute magnetic materials, exemplified by the dilute magnetic semiconductors (DMSs). The theory for MSTs in these materials is based on various cluster models (each specifying the exchange constants that are included), and on the assumption of a random distribution of the magnetic ions. The latter assumption is needed for calculations of the populations of various cluster types. The simplest cluster model includes only the largest isotropic exchange constant, usually J1 between nearest neighbors (NNs). This J1 model accounted for much of the early MST data in Mn-based II–VI DMSs. These early data yielded values of J1, showed that the distribution of the Mn ions was random, and explained the difference between the apparent and true saturation values of the magnetization. Following these early successes the “pure” J1 model was improved in several ways: (1) Some effects of the weaker exchange interactions with distant neighbors (DNs) were treated approximately. (2) Weak anisotropies, and the Dzyaloshinski–Moriya interaction, were added to the model. (3) A spread in the values of J1, due to alloy disorder and/or a lower crystal symmetry, was included. (4) The possibility a nonrandom magnetic-ion distribution was considered, and methods of observing nonrandomness experimentally, and quantifying the degree of nonrandomness, were devised. (5) Cluster probabilities in molecular beam epitaxy (MBE)- grown quantum structures, particularly near interfaces, were considered. Experimental data relating to each of these improvements of the J1 model are presented. Very recent works focused on a direct determination, using MSTs, of the relatively small DN exchange constants. Most of these experiments on DNs required a magnetometer operating in a dilution refrigerator, near 20 mK. The data interpretations were based on cluster models with up to five exchange constants. These models involve hundreds of cluster types, even when clusters with more than four spins are excluded. Clusters with more than four spins were treated approximately. Elaborate computer programs for computing all cluster probabilities and energy levels were required. The results for the DN exchange constants Ji in Mn-based II–VI DMSs disagree with all previous theoretical predictions. Specifically, the next-nearest-neighbor exchange constant J2 is not the second-largest exchange constant. The distance dependence of the Ji is material dependent, unlike the universal behavior predicted by all theories which considered this issue. The experimental results are partially explained by the Yu–Lee and Wei–Zunger theories, which include the directional dependence of the exchange interaction in addition to the distance dependence. The directional dependence leads to a reduction of J2. Electronically accessible tables for cluster types and their probabilities are included as EPAPS. These tables are for all clusters with up to four spins, in both the fcc cation lattice and in the (ideal) hcp cation structure. For fcc the tables include 16 different cluster models with exchange interactions up to the fifth neighbor. For hcp, 64 cluster models with up to eight exchange constants (corresponding to interactions up to the fourth neighbor in fcc) are included. Tables for quintets in the special case of the NN model in fcc and hcp are also included. © 2002 American Institute of Physics.
Show PACS
75.50.Ee Antiferromagnetics
75.50.Tt Fine-particle systems; nanocrystalline materials
75.30.Et Exchange and superexchange interactions
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