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Applied Physics Reviews — 2012

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Comment on “Securing special nuclear material: Recent advances in neutron detection and their role in nonproliferation” [J. Appl. Phys. 108, 111101 (2010)]

Peter Fisher and Steven Ahlen

J. Appl. Phys. 111, 016104 (2012); http://dx.doi.org/10.1063/1.3665707 (1 page)

Online Publication Date: 9 January 2012

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We comment on an omission from the above mentioned article.
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29.40.Mc Scintillation detectors
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High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective

Shujun Zhang and Fei Li

J. Appl. Phys. 111, 031301 (2012); http://dx.doi.org/10.1063/1.3679521 (50 pages)

Online Publication Date: 7 February 2012

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Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100 mm in diameter and 200 mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macrosymmetry, and domain size. Finally, relaxor-PT single crystals are reviewed with respect to specific applications and contrasted to conventional piezoelectric ceramics.
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77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
81.10.Fq Growth from melts; zone melting and refining
77.80.Jk Relaxor ferroelectrics
61.66.Fn Inorganic compounds
77.22.Gm Dielectric loss and relaxation
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The mechanical properties of various chemical vapor deposition diamond structures compared to the ideal single crystal

Peter Hess

J. Appl. Phys. 111, 051101 (2012); http://dx.doi.org/10.1063/1.3683544 (15 pages)

Online Publication Date: 2 March 2012

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The structural and electronic properties of the diamond lattice, leading to its outstanding mechanical properties, are discussed. These include the highest elastic moduli and fracture strength of any known material. Its extreme hardness is strongly connected with the extreme shear modulus, which even exceeds the large bulk modulus, revealing that diamond is more resistant to shear deformation than to volume changes. These unique features protect the ideal diamond lattice also against mechanical failure and fracture. Besides fast heat conduction, the fast vibrational movement of carbon atoms results in an extreme speed of sound and propagation of crack tips with comparable velocity. The ideal mechanical properties are compared with those of real diamond films, plates, and crystals, such as ultrananocrystalline (UNC), nanocrystalline, microcrystalline, and homo- and heteroepitaxial single-crystal chemical vapor deposition (CVD) diamond, produced by metastable synthesis using CVD.
Ultrasonic methods have played and continue to play a dominant role in the determination of the linear elastic properties, such as elastic moduli of crystals or the Young’s modulus of thin films with substantially varying impurity levels and morphologies. A surprising result of these extensive measurements is that even UNC diamond may approach the extreme Young’s modulus of single-crystal diamond under optimized deposition conditions. The physical reasons for why the stiffness often deviates by no more than a factor of two from the ideal value are discussed, keeping in mind the large variety of diamond materials grown by various deposition conditions.
Diamond is also known for its extreme hardness and fracture strength, despite its brittle nature. However, even for the best natural and synthetic diamond crystals, the measured critical fracture stress is one to two orders of magnitude smaller than the ideal value obtained by ab initio calculations for the ideal cubic lattice. Currently, fracture is studied mainly by indentation or mechanical breaking of freestanding films, e.g., by bending or bursting. It is very difficult to study the fracture mechanism, discriminating between tensile, shear, and tearing stress components (mode I–III fracture) with these partly semiquantitative methods. A novel ultrasonic laser-based technique using short nonlinear surface acoustic wave pulses, developing shock fronts during propagation, has recently been employed to study mode-resolved fractures of single-crystal silicon. This method allows the generation of finite cracks and the evaluation of the fracture strength for well-defined crystallographic configurations. Laser ultrasonics reaches the critical stress at which real diamond fails and therefore can be employed as a new tool for mechanistic studies of the fracture behavior of CVD diamond in the future.
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81.05.ug Diamond
73.22.-f Electronic structure of nanoscale materials and related systems
62.20.mm Fracture
62.25.Mn Fracture/brittleness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
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A review and analysis of microwave absorption in polymer composites filled with carbonaceous particles

F. Qin and C. Brosseau

J. Appl. Phys. 111, 061301 (2012); http://dx.doi.org/10.1063/1.3688435 (24 pages)

Online Publication Date: 16 March 2012

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Carbon (C) is a crucial material for many branches of modern technology. A growing number of demanding applications in electronics and telecommunications rely on the unique properties of C allotropes. The need for microwave absorbers and radar-absorbing materials is ever growing in military applications (reduction of radar signature of aircraft, ships, tanks, and targets) as well as in civilian applications (reduction of electromagnetic interference among components and circuits, reduction of the back-radiation of microstrip radiators). Whatever the application for which the absorber is intended, weight reduction and optimization of the operating bandwidth are two important issues. A composite absorber that uses carbonaceous particles in combination with a polymer matrix offers a large flexibility for design and properties control, as the composite can be tuned and optimized via changes in both the carbonaceous inclusions (C black, C nanotube, C fiber, graphene) and the embedding matrix (rubber, thermoplastic). This paper offers a perspective on the experimental efforts toward the development of microwave absorbers composed of carbonaceous inclusions in a polymer matrix. The absorption properties of such composites can be tailored through changes in geometry, composition, morphology, and volume fraction of the filler particles. Polymer composites filled with carbonaceous particles provide a versatile system to probe physical properties at the nanoscale of fundamental interest and of relevance to a wide range of potential applications that span radar absorption, electromagnetic protection from natural phenomena (lightning), shielding for particle accelerators in nuclear physics, nuclear electromagnetic pulse protection, electromagnetic compatibility for electronic devices, high-intensity radiated field protection, anechoic chambers, and human exposure mitigation. Carbonaceous particles are also relevant to future applications that require environmentally benign and mechanically flexible materials.
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78.70.Gq Microwave and radio-frequency interactions
81.05.Qk Reinforced polymers and polymer-based composites
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GaN based nanorods for solid state lighting

Shunfeng Li and Andreas Waag

J. Appl. Phys. 111, 071101 (2012); http://dx.doi.org/10.1063/1.3694674 (23 pages)

Online Publication Date: 2 April 2012

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.07.Bc Nanocrystalline materials
85.60.Jb Light-emitting devices
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