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Applied Physics Reviews — 2012

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Comment on “Securing special nuclear material: Recent advances in neutron detection and their role in nonproliferation” [J. Appl. Phys. 108, 111101 (2010)]

Peter Fisher and Steven Ahlen

J. Appl. Phys. 111, 016104 (2012); http://dx.doi.org/10.1063/1.3665707 (1 page)

Online Publication Date: 9 January 2012

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We comment on an omission from the above mentioned article.
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29.40.Mc Scintillation detectors
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High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective

Shujun Zhang and Fei Li

J. Appl. Phys. 111, 031301 (2012); http://dx.doi.org/10.1063/1.3679521 (50 pages)

Online Publication Date: 7 February 2012

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Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100 mm in diameter and 200 mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macrosymmetry, and domain size. Finally, relaxor-PT single crystals are reviewed with respect to specific applications and contrasted to conventional piezoelectric ceramics.
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77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
81.10.Fq Growth from melts; zone melting and refining
77.80.Jk Relaxor ferroelectrics
61.66.Fn Inorganic compounds
77.22.Gm Dielectric loss and relaxation
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The mechanical properties of various chemical vapor deposition diamond structures compared to the ideal single crystal

Peter Hess

J. Appl. Phys. 111, 051101 (2012); http://dx.doi.org/10.1063/1.3683544 (15 pages)

Online Publication Date: 2 March 2012

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The structural and electronic properties of the diamond lattice, leading to its outstanding mechanical properties, are discussed. These include the highest elastic moduli and fracture strength of any known material. Its extreme hardness is strongly connected with the extreme shear modulus, which even exceeds the large bulk modulus, revealing that diamond is more resistant to shear deformation than to volume changes. These unique features protect the ideal diamond lattice also against mechanical failure and fracture. Besides fast heat conduction, the fast vibrational movement of carbon atoms results in an extreme speed of sound and propagation of crack tips with comparable velocity. The ideal mechanical properties are compared with those of real diamond films, plates, and crystals, such as ultrananocrystalline (UNC), nanocrystalline, microcrystalline, and homo- and heteroepitaxial single-crystal chemical vapor deposition (CVD) diamond, produced by metastable synthesis using CVD.
Ultrasonic methods have played and continue to play a dominant role in the determination of the linear elastic properties, such as elastic moduli of crystals or the Young’s modulus of thin films with substantially varying impurity levels and morphologies. A surprising result of these extensive measurements is that even UNC diamond may approach the extreme Young’s modulus of single-crystal diamond under optimized deposition conditions. The physical reasons for why the stiffness often deviates by no more than a factor of two from the ideal value are discussed, keeping in mind the large variety of diamond materials grown by various deposition conditions.
Diamond is also known for its extreme hardness and fracture strength, despite its brittle nature. However, even for the best natural and synthetic diamond crystals, the measured critical fracture stress is one to two orders of magnitude smaller than the ideal value obtained by ab initio calculations for the ideal cubic lattice. Currently, fracture is studied mainly by indentation or mechanical breaking of freestanding films, e.g., by bending or bursting. It is very difficult to study the fracture mechanism, discriminating between tensile, shear, and tearing stress components (mode I–III fracture) with these partly semiquantitative methods. A novel ultrasonic laser-based technique using short nonlinear surface acoustic wave pulses, developing shock fronts during propagation, has recently been employed to study mode-resolved fractures of single-crystal silicon. This method allows the generation of finite cracks and the evaluation of the fracture strength for well-defined crystallographic configurations. Laser ultrasonics reaches the critical stress at which real diamond fails and therefore can be employed as a new tool for mechanistic studies of the fracture behavior of CVD diamond in the future.
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81.05.ug Diamond
73.22.-f Electronic structure of nanoscale materials and related systems
62.20.mm Fracture
62.25.Mn Fracture/brittleness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
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A review and analysis of microwave absorption in polymer composites filled with carbonaceous particles

F. Qin and C. Brosseau

J. Appl. Phys. 111, 061301 (2012); http://dx.doi.org/10.1063/1.3688435 (24 pages)

Online Publication Date: 16 March 2012

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Carbon (C) is a crucial material for many branches of modern technology. A growing number of demanding applications in electronics and telecommunications rely on the unique properties of C allotropes. The need for microwave absorbers and radar-absorbing materials is ever growing in military applications (reduction of radar signature of aircraft, ships, tanks, and targets) as well as in civilian applications (reduction of electromagnetic interference among components and circuits, reduction of the back-radiation of microstrip radiators). Whatever the application for which the absorber is intended, weight reduction and optimization of the operating bandwidth are two important issues. A composite absorber that uses carbonaceous particles in combination with a polymer matrix offers a large flexibility for design and properties control, as the composite can be tuned and optimized via changes in both the carbonaceous inclusions (C black, C nanotube, C fiber, graphene) and the embedding matrix (rubber, thermoplastic). This paper offers a perspective on the experimental efforts toward the development of microwave absorbers composed of carbonaceous inclusions in a polymer matrix. The absorption properties of such composites can be tailored through changes in geometry, composition, morphology, and volume fraction of the filler particles. Polymer composites filled with carbonaceous particles provide a versatile system to probe physical properties at the nanoscale of fundamental interest and of relevance to a wide range of potential applications that span radar absorption, electromagnetic protection from natural phenomena (lightning), shielding for particle accelerators in nuclear physics, nuclear electromagnetic pulse protection, electromagnetic compatibility for electronic devices, high-intensity radiated field protection, anechoic chambers, and human exposure mitigation. Carbonaceous particles are also relevant to future applications that require environmentally benign and mechanically flexible materials.
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78.70.Gq Microwave and radio-frequency interactions
81.05.Qk Reinforced polymers and polymer-based composites
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GaN based nanorods for solid state lighting

Shunfeng Li and Andreas Waag

J. Appl. Phys. 111, 071101 (2012); http://dx.doi.org/10.1063/1.3694674 (23 pages)

Online Publication Date: 2 April 2012

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.07.Bc Nanocrystalline materials
85.60.Jb Light-emitting devices
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Ultrafast time resolved x-ray diffraction, extended x-ray absorption fine structure and x-ray absorption near edge structure

Ali Oguz Er, Jie Chen, and Peter M. Rentzepis

J. Appl. Phys. 112, 031101 (2012); http://dx.doi.org/10.1063/1.4738372 (16 pages)

Online Publication Date: 2 August 2012

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Ultrafast time resolved x-ray absorption and x-ray diffraction have made it possible to measure, in real time, transient phenomena structures and processes induced by optical femtosecond pulses. To illustrate the power of these experimental methods, we present several representative examples from the literature. (I) Time resolved measurements of photon/electron coupling, electron/phonon interaction, pressure wave formation, melting and recrystallization by means of time resolved x-ray diffraction. (II) Ultrafast x-ray absorption, EXAFS, for the direct measurement of the structures and their kinetics, evolved during electron transfer within molecules in liquid phase. (III) XANES experiments that measure directly pathway for the population of high spin states and the study of the operating mechanism of dye activated TiO2 solar cell devices. The construction and use of novel polycapillary x-ray lenses that focus and collimate hard x-rays efficiently are described.
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78.47.je Time resolved light scattering spectroscopy
88.40.H- Solar cells (photovoltaics)
42.79.Bh Lenses, prisms and mirrors
78.70.Dm X-ray absorption spectra
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
63.20.kd Phonon-electron interactions
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Multi-functional dielectric elastomer artificial muscles for soft and smart machines

Iain A. Anderson, Todd A. Gisby, Thomas G. McKay, Benjamin M. O’Brien, and Emilio P. Calius

J. Appl. Phys. 112, 041101 (2012); http://dx.doi.org/10.1063/1.4740023 (20 pages)

Online Publication Date: 28 August 2012

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Dielectric elastomer (DE) actuators are popularly referred to as artificial muscles because their impressive actuation strain and speed, low density, compliant nature, and silent operation capture many of the desirable physical properties of muscle. Unlike conventional robots and machines, whose mechanisms and drive systems rapidly become very complex as the number of degrees of freedom increases, groups of DE artificial muscles have the potential to generate rich motions combining many translational and rotational degrees of freedom. These artificial muscle systems can mimic the agonist-antagonist approach found in nature, so that active expansion of one artificial muscle is taken up by passive contraction in the other. They can also vary their stiffness. In addition, they have the ability to produce electricity from movement. But departing from the high stiffness paradigm of electromagnetic motors and gearboxes leads to new control challenges, and for soft machines to be truly dexterous like their biological analogues, they need precise control. Humans control their limbs using sensory feedback from strain sensitive cells embedded in muscle. In DE actuators, deformation is inextricably linked to changes in electrical parameters that include capacitance and resistance, so the state of strain can be inferred by sensing these changes, enabling the closed loop control that is critical for a soft machine. But the increased information processing required for a soft machine can impose a substantial burden on a central controller. The natural solution is to distribute control within the mechanism itself. The octopus arm is an example of a soft actuator with a virtually infinite number of degrees of freedom (DOF). The arm utilizes neural ganglia to process sensory data at the local “arm” level and perform complex tasks. Recent advances in soft electronics such as the piezoresistive dielectric elastomer switch (DES) have the potential to be fully integrated with actuators and sensors. With the DE switch, we can produce logic gates, oscillators, and a memory element, the building blocks for a soft computer, thus bringing us closer to emulating smart living structures like the octopus arm. The goal of future research is to develop fully soft machines that exploit smart actuation networks to gain capabilities formerly reserved to nature, and open new vistas in mechanical engineering.
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07.07.Tw Servo and control equipment; robots
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Electrical conduction in chalcogenide glasses of phase change memory

M. Nardone, M. Simon, I. V. Karpov, and V. G. Karpov

J. Appl. Phys. 112, 071101 (2012); http://dx.doi.org/10.1063/1.4738746 (20 pages)

Online Publication Date: 1 October 2012

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Amorphous chalcogenides have been extensively studied over the last half century due to their application in rewritable optical data storage and in non-volatile phase change memory devices. Yet, the nature of the observed non-ohmic conduction in these glasses is still under debate. In this review, we consolidate and expand the current state of knowledge related to dc conduction in these materials. An overview of the pertinent experimental data is followed by a review of the physics of localized states that are peculiar to chalcogenide glasses. We then describe and evaluate twelve relevant transport mechanisms with conductivities that depend exponentially on the electric field. The discussed mechanisms include various forms of Poole-Frenkel ionization, Schottky emission, hopping conduction, field-induced delocalization of tail states, space-charge-limited current, field emission, percolation band conduction, and transport through crystalline inclusions. Most of the candidates provide more or less satisfactory fits of the observed non-linear IV data. Our analysis calls upon additional studies that would enable one to discriminate between the various alternative models.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

Z. Chen and V. G. Harris

J. Appl. Phys. 112, 081101 (2012); http://dx.doi.org/10.1063/1.4739219 (11 pages)

Online Publication Date: 16 October 2012

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It is widely recognized that as electronic systems’ operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
84.40.Lj Microwave integrated electronics
85.70.Ge Ferrite and garnet devices
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Smart textiles: Challenges and opportunities

Kunigunde Cherenack and Liesbeth van Pieterson

J. Appl. Phys. 112, 091301 (2012); http://dx.doi.org/10.1063/1.4742728 (14 pages)

Online Publication Date: 7 November 2012

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Smart textiles research represents a new model for generating creative and novel solutions for integrating electronics into unusual environments and will result in new discoveries that push the boundaries of science forward. A key driver for smart textiles research is the fact that both textile and electronics fabrication processes are capable of functionalizing large-area surfaces at very high speeds. In this article we review the history of smart textiles development, introducing the main trends and technological challenges faced in this field. Then, we identify key challenges that are the focus of ongoing research. We then proceed to discuss fundamentals of smart textiles: textile fabrication methods and textile interconnect lines, textile sensor, and output device components and integration of commercial components into textile architectures. Next we discuss representative smart textile systems and finally provide our outlook over the field and a prediction for the future.
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89.20.Kk Engineering
89.20.Bb Industrial and technological research and development
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Nanophotonic light trapping in solar cells

S. Mokkapati and K. R. Catchpole

J. Appl. Phys. 112, 101101 (2012); http://dx.doi.org/10.1063/1.4747795 (19 pages)

Online Publication Date: 19 November 2012

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Nanophotonic light trapping for solar cells is an exciting field that has seen exponential growth in the last few years. There has been a growing appreciation for solar energy as a major solution to the world’s energy problems, and the need to reduce materials costs by the use of thinner solar cells. At the same time, we have the newly developed ability to fabricate controlled structures on the nanoscale quickly and cheaply, and the computational power to optimize the structures and extract physical insights. In this paper, we review the theory of nanophotonic light trapping, with experimental examples given where possible. We focus particularly on periodic structures, since this is where physical understanding is most developed, and where theory and experiment can be most directly compared. We also provide a discussion on the parasitic losses and electrical effects that need to be considered when designing nanophotonic solar cells.
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88.40.hm Cost of production of solar cells

The effects of vacuum ultraviolet radiation on low-k dielectric films

H. Sinha, H. Ren, M. T. Nichols, J. L. Lauer, M. Tomoyasu, N. M. Russell, G. Jiang, G. A. Antonelli, N. C. Fuller, S. U. Engelmann, Q. Lin, V. Ryan, Y. Nishi, and J. L. Shohet

J. Appl. Phys. 112, 111101 (2012); http://dx.doi.org/10.1063/1.4751317 (15 pages)

Online Publication Date: 4 December 2012

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Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trapped-charge accumulation during processing of low-κ SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.55.Bh Low-permittivity dielectric films
73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
77.22.Ch Permittivity (dielectric function)
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Thermal fluctuations of magnetic nanoparticles: Fifty years after Brown

William T. Coffey and Yuri P. Kalmykov

J. Appl. Phys. 112, 121301 (2012); http://dx.doi.org/10.1063/1.4754272 (47 pages)

Online Publication Date: 17 December 2012

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The reversal time, superparamagnetic relaxation time, of the magnetization of fine single domain ferromagnetic nanoparticles owing to thermal fluctuations plays a fundamental role in information storage, paleomagnetism, biotechnology, etc. Here a comprehensive tutorial-style review of the achievements of fifty years of development and generalizations of the seminal work of Brown [Phys. Rev. 130, 1677 (1963)] on thermal fluctuations of magnetic nanoparticles is presented. Analytical as well as numerical approaches to the estimation of the damping and temperature dependence of the reversal time based on Brown's Fokker-Planck equation for the evolution of the magnetic moment orientations on the surface of the unit sphere are critically discussed while the most promising directions for future research are emphasized.
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75.75.-c Magnetic properties of nanostructures
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Jk Magnetization reversal mechanisms
75.70.Rf Surface magnetism
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